Staff

Pepen Arifin


Lektor

Nama : Dr. Pepen Arifin
Kelompok Keahlian : Fisika Material Elektronik
Sekolah / Fakultas : Fakultas Matematika dan Ilmu Pengetahuan Alam
Jabatan Fungsional : Lektor
S1 ITB Bandung Indonesia 1987
S3 Macquarie University Sidney Australia 1997
  • Program Asuh Perguruan Tinggi dan Program Studi (2017)
  • Workshop Nasional Strategi Meraih Akreditasi Internasional (2017)
  • Pengembangan Politeknik Pariwisata Batam menjadi Institut Bisnis Teknologi dan Pariwisata Batam (2016)
  • Peningkatan Efisiensi Sel Surya Ukuran Besar Menggunakan Jembatan Logam Ukuran Nanometer (2012)
  • Peningkatan Efisiensi Sel Surya Ukuran Besar Menggunakan Jembatan Logam Ukuran Nanometer (2012)
  • Seleksi Penerimaan Calon Pegawai Negeri Sipil secara Nasional Tahun 2012 (2012)
  • Studi Injeksi dan Transport Spin Elektron Dalam Struktur Tio2 : Co/Ti02/Ti02 : Co (2012)
  • System Development (SDV) 2011 SUB COMPONENT B.2c GRANTS FOR PERFORMANCE BASED CONTRACT (2011)
  • AIGaN/GaN Heterostructure Field-Effect Transistors (2007)
  • Saripudin, A., Arifin, P. (2016) Growth mechanism of Co:TiO2 thin film deposited by metal organic chemical vapor deposition technique, IOP Conference Series: Materials Science and Engineering, Vol. 128, Issue 1, Art. No. 12046. DOI: 10.1088/1757-899X/128/1/012046(Internasional)
  • Suhandi, A., Tayubi, Y.R., Arifin, P. (2016) Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb, IOP Conference Series: Materials Science and Engineering, Vol. 128, Issue 1, Art. No. 12021. DOI: 10.1088/1757-899X/128/1/012021(Internasional)
  • Saehana, S., Darsikin, Yuliza, E., Arifin, P., Khairurrijal, Abdullah, M. (2014) A new approach for fabricating low cost DSSC by using carbon-ink from inkjet printer and its improvement efficiency by depositing metal bridge between titanium dioxide particles, Journal of Solar Energy Engineering, Transactions of the ASME, Vol. 136, Issue 4, Art. No. 44504. DOI: 10.1115/1.4027695(Internasional)
  • Saripudin, A., Saragih, H., Khairurrijal, Winata, T., Arifin, P. (2014) Effect of growth temperature on cobalt-doped TiO2 thin films deposited on Si(100) substrate by MOCVD technique, Advanced Materials Research, Vol. 896, pp. 192-196. DOI: 10.4028/www.scientific.net/AMR.896.192(Internasional)
  • Saehana, S., Yuliza, E., Arifin, P., Khairurrijal, Abdullah, M. (2013) Dye-sensitized solar cells (DSSC) from black rice and its performance improvement by depositing interconnected copper (copper bridge) into the space between TiO2 nanoparticles, Materials Science Forum, Vol. 737, pp. 43-53. DOI: 10.4028/www.scientific.net/MSF.737.43(Internasional)
  • Saehana, S., Arifin, P., Khairurrijal, Abdullah, M. (2012) A new architecture for solar cells involving a metal bridge deposited between active TiO 2 particles, Journal of Applied Physics, Vol. 111, Issue 12, Art. No. 123109. DOI: 10.1063/1.4730393(Internasional)
  • Ramelan, A.H., Arifin, P., Goldys, E. (2011) Surface morphology, electrical and optical properties n-type doped MOCVD grown GaSb using dimethyltellurium, International Journal of Materials Research, Vol. 102, Issue 11, pp. 1403-1407. (Internasional)
  • Saehana, S., Prasetyowati, R., Hidayat, M.I., Arifin, P., Khairurrijal, Abdullah, M. (2011) Performance improvement of TiO2 based solar cells by coating Cu nanoparticles into the space between TiO2, AIP Conference Proceedings, Vol. 1415, pp. 163-166. DOI: 10.1063/1.3667247(Internasional)
  • Arsyad, F.S., Arifin, P., Barmawi, M., Budiman, M., Sukirno, Supu, A. (2010) Growth of AlxGa1-xN epitaxial thin film on sapphire substrate by plasma assisted metal organic chemical vapor deposition (PA-MOCVD), IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, Art. No. 5549448, pp. 64-67. DOI: 10.1109/SMELEC.2010.5549448(Internasional)
  • Mulyanti, B., Arifin, P. (2010) Plasma-assisted MOCVD growth of GaMnN, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, Art. No. 5549459, pp. 56-59. DOI: 10.1109/SMELEC.2010.5549459(Internasional)
  • Ramelan, A.H., Arifin, P., Goldys, E. (2010) GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS), ICONN 2010-Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, Art. No. 6045185, pp. 84-86. DOI: 10.1109/ICONN.2010.6045185(Internasional)
  • Ramelan, A.H., Goldys, E.M., Arifin, P. (2010) Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, Art. No. 5699729, pp. 183-184. DOI: 10.1109/COMMAD.2010.5699729(Internasional)
  • Ramelan, A.H., Harjana, H., Arifin, P. (2010) Growth of AlGaSb compound semiconductors on GaAs substrate by metalorganic chemical vapour deposition, Advances in Materials Science and Engineering, Vol. 2010, Art. No. 923409. DOI: 10.1155/2010/923409(Internasional)
  • Hamidah, I., Suhandi, A., Setiawan, A., Arifin, P. (2008) High mobility and high N concentration of GaNxAs1-x thin films grown by metal organic chemical vapor deposition, 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008, Art. No. 4781475. DOI: 10.1109/IPGC.2008.4781475(Internasional)
  • Subagio, A., Sutanto, H., Supriyanto, E., Budiman, M., Arifin, P., Sukirno, Barmawi, M. (2008) Study of Mg-doped GaN thin films grown on c-plane sapphire substrate by plasma assisted metalorganic chemical vapor deposition method, AIP Conference Proceedings, Vol. 989, pp. 224-227. DOI: 10.1063/1.2906072(Internasional)
  • Supriyanto, E., Sutanto, H., Subagio, A., Saragih, H., Budiman, M., Arifin, P., Sukirno, Barmawi, M. (2008) Effect of Co-doping on microstructural, crystal structure and optical properties of Ti1-xCOxO2 thin films deposited on Si substrate by MOCVD method, AIP Conference Proceedings, Vol. 989, pp. 237-240. DOI: 10.1063/1.2906075(Internasional)
  • Sutanto, H., Subagio, A., Supriyanto, E., Arifin, P., Budiman, M., Sukirno, Barmawi, M. (2008) Microstructure and optical properties of AlxGa 1-xN/GaN heterostructure thin films grown on Si(111) substrate by plasma assisted metalorganic chemical vapor deposition method, AIP Conference Proceedings, Vol. 989, pp. 134-137. DOI: 10.1063/1.2906048(Internasional)
  • Arsyad, F.S., Subagio, A., Sutanto, H., Arifin, P., Budiman, M., Barmawi, M., Husein, I., Jamal, Z.A. (2006) Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, Art. No. 4143344, pp. 116-118. DOI: 10.1109/ICONN.2006.340564(Internasional)
  • Mulyanti, B., Subagio, A., Sutanto, H., Arsyad, F.S., Arifin, P., Budiman, M., Barmawi, M. (2006) Study of Mn incorporation into GaN:Mn magnetic semiconductor thin films prepared by plasma assisted MOCVD, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, Art. No. 4143402, pp. 344-347. DOI: 10.1109/ICONN.2006.340622(Internasional)
  • Saragih, H., Arifin, P., Barmawi, M. (2006) Co-doped TiO2 rutile thin films deposited by MOCVD method, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, Art. No. 4143408, pp. 366-369. DOI: 10.1109/ICONN.2006.340628(Internasional)
  • Yam, F.K., Hassan, Z., Ibrahim, K., Barmawi, M., Sugianto, Budiman, M., Arifin, P. (2006) Epitaxial GaN film grown at low temperature by hydrogen-plasma assisted MOCVD, Materials Science Forum, Vol. 517, pp. 9-12. DOI: 10.4028/0-87849-404-9.9(Internasional)
  • Hashim, M.R., Oh, S.A., Ng, S.S., Hassan, Z., Ibrahim, K., Barmawi, M., Sugianto, Budiman, M., Arifin, P. (2005) Optical properties of GaN on Si substrate using plasma-assisted MOCVD technique in the Infrared and visible regions, Materials Science Forum, Vol. 480-481, pp. 519-524. (Internasional)
  • Lee, Y.C., Hassan, Z., Yam, F.K., Abdullah, M.J., Ibrahim, K., Barmawi, M., Sugianto, Budiman, M., Arifin, P. (2005) A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon, Applied Surface Science, Vol. 249, Issue 42461, pp. 91-96. DOI: 10.1016/j.apsusc.2004.11.063(Internasional)
  • Oh, S.A., Hashim, M.R., Ng, S.S., Hassan, Z., Ibrahim, K., Barmawi, M., Sugianto, Budiman, M., Arifin, P. (2004) Optical properties of GaN on sapphire substrates grown by plasma-assisted MOCVD, Proceedings ICSE 2004-2004 IEEE International Conference on Semiconductor Electronics, Art. No. 1620881, pp. 252-256. (Internasional)
  • Irzaman, Darvina, Y., Fuad, A., Arifin, P., Budiman, M., Barmawi, M. (2003) Physical and pyroelectric properties of tantalum-oxide-doped lead zirconium titanate [Pb0.9950(Zr0.525Ti0.465Ta0.010) O3] thin films and their application for IR sensors, Physica Status Solidi (A) Applied Research, Vol. 199, Issue 3, pp. 416-424. DOI: 10.1002/pssa.200306677(Internasional)
  • (Internasional)
  • Arifin, P., Sugianto, Suprianto, E., Wendri, N., Sutanto, H., Budiman, M., Barmawi, M. (2002) Growth of AlxGa1-xN by Plasma assisted MOCVD, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, Vol. 2002-January, Art. No. 1237185, pp. 45-48. DOI: 10.1109/COMMAD.2002.1237185(Internasional)
  • Budiman, M., Sutanto, H., Wendri, N., Supriyanto, E., Sugianto, Arifin, P., Barmawi, M. (2002) Au/n-GaN schottky diode grown on Si(111) by plasma assisted MOCVD, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, Vol. 2002-January, Art. No. 1237200, pp. 91-94. DOI: 10.1109/COMMAD.2002.1237200(Internasional)
  • (Internasional)
  • Sugianto, A.S., Erzam, R.A.S., Budiman, M., Arifin, P., Barmawi, M. (2000) The influence of hydrogen plasma and annealing on GaN film grown by plasma-assisted MOCVD, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, Vol. 2000-January, Art. No. 1023004, pp. 531-534. DOI: 10.1109/COMMAD.2000.1023004(Internasional)
  • Sugianto, Sani, R.A., Arifin, P., Budiman, M., Barmawi, M. (2000) Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD, Journal of Crystal Growth, Vol. 221, Issue 42461, pp. 311-315. DOI: 10.1016/S0022-0248(00)00706-5(Internasional)
  • Sustini, E., Sugianto, Sani, R.A., Latunuwe, A., Arifin, P., Barrnawi, M. (2000) Low pressure MOCVD growth of GaSb using trisdimethylaminoantimony (TDMASb), Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, Vol. 2000-January, Art. No. 1022906, pp. 121-124. DOI: 10.1109/COMMAD.2000.1022906(Internasional)
  • Sani, R.A., Barmawi, M., Arifin, P., Sugianto (1999) Growth of GaN by Microwave Plasma enhanced MOCVD, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 209-214. (Internasional)
  • Arifin, P., Tansley, T.L., Goldys, E.M. (1997) Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer, Solid-State Electronics, Vol. 41, Issue 8, pp. 1075-1078. (Internasional)
  • Arifin, P., Tansley, T.L., Goldys, E.M. (1996) Electron transport in low temperature grown in GaAs, Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 349-352. (Internasional)
  • Arifin, P., Tansley, T.L., Goldys, E.M. (1996) Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n +GaAs Schottky diodes, Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 345-348. (Internasional)
  • Arifin, P., Goldys, E., Tansley, T.L. (1995) Monte Carlo simulation of electron drift velocity in low-temperature-grown gallium arsenide in a Schottky-barrier model, Physical Review B, Vol. 52, Issue 8, pp. 5708-5713. DOI: 10.1103/PhysRevB.52.5708(Internasional)
  • Arifin, P., Goldys, E.M., Tansley, T.L. (1995) Electron mobility in low temperature grown gallium arsenide, Materials Science and Engineering B, Vol. 35, Issue 42430, pp. 330-333. DOI: 10.1016/0921-5107(95)01347-4(Internasional)